MSP0505W

MSP0505W -55V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter PIN Configuration Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP0505W MSP0505W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -55 ±20 -5 -3.0 -25...