MSP0515D

MSP0515D -55V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter PIN Configuration Lead Free Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP0515D MSP0515D TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -55 ±20 -15 -10 -50 50 -55 To 15...