MSP0604L

MSP0604L -60V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Lead Free Application ● Load switch ● PWM application PIN Configuration Marking and pin Assignment SOT-23-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device MSP0604L Device Package SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Drain Current-Continuous Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ID IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Ambient(Note 2) RθJA Limit -60 ±20 -4 -12 1.5 -55 To 150 83....