MSN2302

MSN2302 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 3.0A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management PIN Configuration Lead Free 3D G1 2S Marking and pin assignment D G SOT-23 top view S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN2302 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 3.0 10 1 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to...