N-Channel Enhancement Mode Power MOSFET
MSN2312
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2....
Description
MSN2312
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Lead Free
Application
● Battery protection ● Load switch ● Power management
PIN Configuration
Marking and pin assignment
D
G
SOT-23 top view
S Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN2312
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20 ±10
5 13.5 1.25 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (No...
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