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MSN3420

MORESEMI

N-Channel Enhancement Mode Power MOSFET

MSN3420 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 35mΩ @ VGS=2....


MORESEMI

MSN3420

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Description
MSN3420 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Uni-directional Load switch ●Bi-directional Load switch Lead Free PIN Configuration Marking and pin Assignment SOT-23 top view D G S Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN3420 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 6 30 1.25 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note ...




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