MSN014WE
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected
Application
● PWM application ● Load switch
PIN Configuration
Lead Free
Ma...
