FX30ASJ-03

FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET Features Drive voltage : 4 V VDSS : –30 V rDS(ON) (max) : 61 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1445-0200 (Previous: MEJ02G0266-0101) Rev.2.00 Aug 07, 2006 1. Gate 2. Drain 3. Source 4. Drain Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –30 ±20 –30 –120 –30 –30 –120 35 – 55 to +150 – 55 to +150 0.32 Unit V V A A A A A W °C °C g (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 ...