FX30SMJ-3

FX30SMJ-3 High-Speed Switching Use Pch Power MOS FET Features Drive voltage : 4 V VDSS : –150 V rDS(ON) (max) : 100 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 100 ns Outline REJ03G1449-0200 (Previous: MEJ02G0292-0101) Rev.2.00 Aug 07, 2006 RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 4 3 1 23 1 2, 4 1. Gate 2. Drain 3. Source 4. Drain Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –150 ±20 –30 –120 –30 –30 –120 150 – 55 to +150 – 55 to +150 4.8 Unit V V A A A A A W °C °C g (Tc = 25°C) Conditions VGS = 0 V VDS = 0 V L = 30 µH Typical value Rev.2.00 Aug 07, 2006 page 1 o...