BCV27
Discrete POWER & Signal Technologies
BCV27
C
E
SOT-23
Mark: FF
B
NPN Darlington Transistor
This device is de...
BCV27
Discrete POWER & Signal Technologies
BCV27
C
E
SOT-23
Mark: FF
B
NPN Darlington
Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30 40 10 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
*BCV27 350 2.8 357
Units
mW mW/ °C °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
©1997 Fairchild Semiconductor Corporation
BCV27
NPN Darlington
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown...