Data Sheet
FSYA450D, FSYA450R
March 1999
File Number 4678
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs...
Data Sheet
FSYA450D, FSYA450R
March 1999
File Number 4678
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect
transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be...