BCV29

NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV28, BCV48 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCV29, BCV49 1 2 3 2 Type BCV29 BCV49 Marking EF EG Maximum Ratings Parameter Collector-emitter voltage BCV29 BCV49 Collector-base voltage BCV29 BCV49 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 130 °C Junction temperature Storage temperature Pin Configuration 1=B 2=C 3=E 1=B 2=C 3=E Package SOT89 SOT89 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 30 60 40 80 10 500 800 100 200 1 150 -65 ... 150 Unit V mA W °C 1 2011-10-05 BCV29, BCV49 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 20 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 V(BR)CEO 30 60 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV29 IC = 100 µA, IE = 0 , BCV49 V(BR)CBO 40 80 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 10 - - Collector-base cutoff current VCB = 30 V, IE = 0 , BCV29 VCB = 60 V, IE = 0 , BCV49 VCB = 30 V, IE = ...