BCV26, BCV46
PNP Silicon Darlington Transistors
For general AF applications High collector current High current ga...
BCV26, BCV46
PNP Silicon Darlington
Transistors
For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (
NPN)
3
2 1
VPS05161
Type BCV26 BCV46
Maximum Ratings Parameter
Marking FDs FEs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCEO VCBO VEBO
BCV26 30 40 10
BCV46 60 80 10
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
500 800 100 200 360 150 -65 ... 150
mA
mW °C
Thermal Resistance Junction - soldering point1) RthJS
210
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-13-2001
BCV26, BCV46
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 0.5 A, VCE = 5 V BCV26 BCV46 BCV26...
