BCV47

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors FEATURES Medium current (max. 500 mA) Low voltage (max. 60 V) High DC current gain (min. 20000). APPLICATIONS Preamplifier input applications. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. MARKING 1 2 BCV27; BCV47 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 3 TR1 TR2 2 MAM298 TYPE NUMBER BCV27 BCV47 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) FF∗ FG∗ Top view Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV27 BCV47 VCES collector-emitter voltage BCV27 BCV47 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 60 10 500 800 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 40 80 V V MIN. MAX. UNIT 1999 Apr 08 2 Philips Semiconductors Product specification NPN Darlington tran...