BCV48

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV28; BCV48 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product specification PNP Darlington transistors FEATURES Very high DC current gain (min. 10000) High current (max. 500 mA) Low voltage (max. 60 V). APPLICATIONS Where very high amplification is required. handbook, halfpage BCV28; BCV48 PINNING PIN 1 2 3 emitter collector base DESCRIPTION DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BCV29 and BCV49. MARKING TYPE NUMBER BCV28 BCV48 MARKING CODE ED EE 1 Bottom view 2 3 3 2 TR1 TR2 1 MAM301 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV28 BCV48 VCES collector-emitter voltage BCV28 BCV48 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature open collector VBE = 0 − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 −30 −60 −10 −500 −800 −100 1.3 +150 150 +150 V V V mA mA mA W °C °C °C PARAMETER collector-base voltage CONDITI...