NPN Silicon Double Transistor
• To be used as a current mirror • Good thermal coupling and VBE matching • High current g...
NPN Silicon Double
Transistor
To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101
BCV61
3 4
2 1
C1 (2)
C2 (1)
Tr.1 Tr.2
Type BCV61B BCV61C
Marking 1Ks 1Ls
E1 (3)
E2 (4)
EHA00012
1 = C2 1 = C2
Pin Configuration 2 = C1 3 = E1 4 = E2 2 = C1 3 = E1 4 = E2
Package SOT143 SOT143
Maximum Ratings Parameter Collector-emitter voltage (
transistor T1)
Symbol VCEO
Value 30
Collector-base voltage (open emitter) (
transistor T1)
VCBO
30
Emitter-base voltage DC collector current Peak collector current, tp < 10 ms Base peak current (
transistor T1) Total power dissipation, TS = 99 °C Junction temperature Storage temperature
VEBS IC ICM IBM Ptot Tj Tstg
6 100 200 200 300 150 -65 ... 150
Thermal Resistance Junction - soldering point1)
RthJS
≤170
1For calculation of RthJA please refer to Application Note AN077 (Thermal...
