Document
BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number
BCV62 BCV62A BCV62B BCV62C
Package NXP SOT143B
JEITA -
NPN complement
BCV61 BCV61A BCV61B BCV61C
1.2 Features and benefits
Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs AEC-Q101 qualified Small SMD plastic package
1.3 Applications
Applications with working point independent of temperature Current mirrors
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
VCEO
collector-emitter voltage
IC collector current
Transistor TR1
open base
- - −30 V - - −100 mA
hFE DC current gain
VCE = −5 V; IC = −100 μA 100 -
VCE = −5 V; IC = −2 mA
100 -
800
NXP Semiconductors
BCV62
PNP general-purpose double transistors
Table 2. Quick reference data …continued
Symbol Parameter
Conditions
Transistor TR2
hFE DC current gain BCV62
VCE = −5 V; IC = −2 mA
BCV62A
BCV62B
BCV62C
Min Typ Max Unit
100 100 220 420 -
800 250 475 800
2. Pinning information
Table 3. Pin 1
2 3 4
Pinning Description collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter TR2
Simplified outline Graphic symbol
43
43
12
TR2 TR1
12 006aaa843
3. Ordering information
Table 4. Ordering information
Type number
Package
Name Description
BCV62
- plastic surface-mounted package; 4 leads
BCV62A
BCV62B
BCV62C
4. Marking
Table 5. Marking codes Type number BCV62 BCV62A BCV62B BCV62C
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] 3M* 3J* 3K* 3L*
Version SOT143B
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
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NXP Semiconductors
BCV62
PNP general-purpose double transistors
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage
VCEO
collector-emitter voltage
VEBS
emitter-base voltage
IC collector current
ICM peak collector current
IBM peak base current
Per device
open emitter open base VCE = 0 V
-
Ptot Tj Tamb Tstg
total power dissipation junction temperature ambient temperature storage temperature
Tamb ≤ 25 °C
[1] −65 −65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
Max Unit
−30 −30 −6 −100 −200 −200
V V V mA mA mA
250 150 +150 +150
mW °C °C °C
Table 7. Symbol Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air to ambient
[1] Device mounted on an FR4 PCB.
7. Characteristics
Min Typ Max Unit [1] - - 500 K/W
BCV62
Product data sheet
Table 8. Character.