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BCV62 Dataheets PDF



Part Number BCV62
Manufacturers NXP
Logo NXP
Description PNP general purpose double transistor
Datasheet BCV62 DatasheetBCV62 Datasheet (PDF)

BCV62 PNP general-purpose double transistors Rev. 4 — 26 July 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV62 BCV62A BCV62B BCV62C Package NXP SOT143B JEITA - NPN complement BCV61 BCV61A BCV61B BCV61C 1.2 Features and benefits „ Low current (max. 100 mA) „ Low voltage (max. 30 V) „ Matched pairs „ AEC-Q101 qualified „ Small.

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BCV62 PNP general-purpose double transistors Rev. 4 — 26 July 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCV62 BCV62A BCV62B BCV62C Package NXP SOT143B JEITA - NPN complement BCV61 BCV61A BCV61B BCV61C 1.2 Features and benefits „ Low current (max. 100 mA) „ Low voltage (max. 30 V) „ Matched pairs „ AEC-Q101 qualified „ Small SMD plastic package 1.3 Applications „ Applications with working point independent of temperature „ Current mirrors 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage IC collector current Transistor TR1 open base - - −30 V - - −100 mA hFE DC current gain VCE = −5 V; IC = −100 μA 100 - VCE = −5 V; IC = −2 mA 100 - 800 NXP Semiconductors BCV62 PNP general-purpose double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Transistor TR2 hFE DC current gain BCV62 VCE = −5 V; IC = −2 mA BCV62A BCV62B BCV62C Min Typ Max Unit 100 100 220 420 - 800 250 475 800 2. Pinning information Table 3. Pin 1 2 3 4 Pinning Description collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter TR2 Simplified outline Graphic symbol 43 43 12 TR2 TR1 12 006aaa843 3. Ordering information Table 4. Ordering information Type number Package Name Description BCV62 - plastic surface-mounted package; 4 leads BCV62A BCV62B BCV62C 4. Marking Table 5. Marking codes Type number BCV62 BCV62A BCV62B BCV62C [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking code[1] 3M* 3J* 3K* 3L* Version SOT143B BCV62 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 26 July 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 NXP Semiconductors BCV62 PNP general-purpose double transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per transistor VCBO collector-base voltage VCEO collector-emitter voltage VEBS emitter-base voltage IC collector current ICM peak collector current IBM peak base current Per device open emitter open base VCE = 0 V - Ptot Tj Tamb Tstg total power dissipation junction temperature ambient temperature storage temperature Tamb ≤ 25 °C [1] −65 −65 [1] Device mounted on an FR4 Printed-Circuit Board (PCB). 6. Thermal characteristics Max Unit −30 −30 −6 −100 −200 −200 V V V mA mA mA 250 150 +150 +150 mW °C °C °C Table 7. Symbol Rth(j-a) Thermal characteristics Parameter Conditions thermal resistance from junction in free air to ambient [1] Device mounted on an FR4 PCB. 7. Characteristics Min Typ Max Unit [1] - - 500 K/W BCV62 Product data sheet Table 8. Character.


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