Document
PNP Silicon Double Transistors
Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage
q
BCV 62
Type BCV 62 A BCV 62 B BCV 62 C
Marking 3Js 3Ks 3Ls
Ordering Code (tape and reel) Q62702-C2158 Q62702-C2159 Q62702-C2160
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS = 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Symbol VCE0 VCB0 VEBS IC ICM IBM Ptot Tj Tstg
Values 30 30 6 100 200 200 300 150 – 65 … + 150
Unit V
mA
mW ˚C
Rth JA Rth JS
≤ ≤
240 170
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCV 62
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0 – – hFE BCV 62 A BCV 62 B BCV 62 C VCEsat – – VBEsat – – VBE 600 – 650 – 750 820 700 850 – – 75 250 300 650 100 125 220 420 – 180 290 520 220 475 800 mV – – 15 5 nA µA – 30 30 6 – – – – – – V Values typ. max. Unit
Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IC = 0.5 mA IC = 100 mA, IC = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BCV 62
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T2 Base-emitter forward voltage IE = 10 µA IE = 250 mA Matching of transistor T1 and transistor T2 at IE2 = 0.5 mA and VCE1 = 5 V TA = 25 ˚C TA = 150 ˚C Thermal coupling of transistor T1 and T1: VCE = 5 V transistor T21) Maximum current for thermal stability of IC1 AC characteristics for transistor T1 Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, IC = iC = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = iC = 0, f = 1 MHz Noise figure IC = 200 µA, VCE = 5 V, RS = 2 kΩ f = 1 kHz, B = 200 Hz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz fT Ccb Cibo F – – – – 250 3 8 2 – – – – dB MHz pF VBES 0.4 – – – – 1.8 V Values typ. max. Unit
IC1 / IC2 IC1 / IC2 IE2
0.7 0.7 –
– – 5
1.3 1.3 – mA
h11e h12e h21e h22e
– – 100 –
4.5 2 – 30
– – 900 –
kΩ 10– 4 –
µS
1)
Without emitter resistor. Device mounted on alumina 15 mm × 16.5 mm × 0.7 mm.
Semiconductor Group
3
BCV 62
Test circuit for current matching
Note: Voltage drop at contacts: VCO <
2 VT = 16 mV 3
Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1 / IE2 = 1.3
Note: BCV 62 with emitter resistors
Semiconductor Group
4
BCV 62
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Permissible pulse load Ptot max/Ptot DC = f (tp)
Semiconductor Group
5
.