DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCV71; BCV72 NPN general purpose transistors
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCV71; BCV72
NPN general purpose
transistors
Product specification Supersedes data of 1997 Mar 11 1999 Apr 08
Philips Semiconductors
Product specification
NPN general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 60 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION
NPN transistor in a SOT23 plastic package. MARKING TYPE NUMBER BCV71 BCV72 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) K7∗ K8∗
Top view
handbook, halfpage
BCV71; BCV72
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = 2 mA open collector − − − − − − − −65 − −65 MIN. MAX. 80 60 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN general purpose
transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified...