BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransist...
BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar
Transistors Si-Epi-Planar Universal
transistoren für die Oberflächenmontage
Version 2006-07-28
2.9 ±0.1 0.4 3
Type Code
1
2
1.1
1.9
Dimensions - Maße [mm] 1=B 2=E 3=C
2.5 max 1.3±0.1
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
PNP
250 mW SOT-23 (TO-236) 0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
B open E open C open
- VCEO - VCBO - VEB0
Ptot - IC - ICM - IBM Tj TS
Grenzwerte (TA = 25°C)
BCW29
BCW30
32 V
32 V
5V
250 mW 1)
100 mA
200 mA
200 mA
-55...+150°C -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
BCW29 BCW30
hFE hFE
- VCE = 5 V, - IC = 2 mA
BCW29 BCW30
hFE hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA
- VCEsat - VCEsat
Ke...