NCE2030K

http://www.ncepower.com Pb Free Product NCE2030K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON) <13mΩ @ VGS=10V (Typ:10.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Load switching ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCE2030K NCE2030K TO-252-2L - - Absolute Maximum Ratings (TA=25℃unless otherwise note...