NCE8651Q

http://www.ncepower.com Pb Free Product NCE8651Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● 2.5V Drive ● Common-drain type Schematic diagram Pin Assignment Application ● Battery protection switch ● Mobile device battery charging and discharging DFN 3x3 top view Package Marking and Ordering Information Device Marking Device Device Package NCE8651Q NCE8651Q DFN 3x3 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current...