Document
http://www.ncepower.com
Pb Free Product
NCE3080KA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3080KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE3080KA
NCE3080KA
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
D.