NCE6045G

http://www.ncepower.com Pb Free Product NCE6045G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =45A RDS(ON) < 13mΩ @ VGS=10V (Typ:10mΩ) RDS(ON) < 17mΩ @ VGS=4.5V (Typ:13mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Load switch DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package NCE6045G NCE6045G DFN5X6-8L Reel Size Ø330mm Tape width 12mm Quantity 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=10...