N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE8010S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8010S ...
Description
http://www.ncepower.com
Pb Free Product
NCE8010S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Schematic diagram
Application
● Power switching application ● Load switch
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE8010S
NCE8010S
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Dr...
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