NCE80H16WD

http://www.ncepower.com Pb Free Product NCE80H16WD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE80H16WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =160A RDS(ON) <4.5mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-263T-2L top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package NCE80H16WD NCE80H16WD TO-263T-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted)...