BCW32
BCW32
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector curre...
BCW32
BCW32
NPN General Purpose Amplifier
This device is designed for general purpose applications at collector currents to 300mA. Sourced from process 10.
3
2 1
SOT-23
Mark: D2
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current (DC) Operating and Storage Junction Temperature Range Value 32 32 5.0 500 -55 ~ +150 Units V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition IC = 2.0mA, IB = 0 IC = 10µA, IB = 0 IC = 10µA, IC = 0 VCB = 32V, IE = 0 VCB = 32V, IE = 0, TA = 100°C IC = 2.0mA, VCE = 5.0V IC = 10mA, IB = 0.5mA IC = 2.0mA, VCE = 5.0V IC = 2.0mA, VCE = 5.0V f = 35MHz VCB = 10V, IE = 0, f = 1.0MHz IC = 0.2mA, VCE = 5.0V RS = 2.0kΩ, f = 1.0kHz BW = 200Hz 0.55 200 4.0 10 pF dB 200 Min. 32 32 5.0 100 10 450 0.25 0.7 V V Typ. Max. Units V V V nA µA Off Characteristics Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current
On Characteris...