NCE01H13WD

http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H13WD General Features ● VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V (Typ:5.2mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-263T-2L top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking NCE01H13WD Device NCE01H13WD Device Package TO-263T-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unles...