Document
http://www.ncepower.com
Pb Free Product
NCE0224F
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0224F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V
(Typ:64mΩ)
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220F top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0224F
NCE0224F
TO-220F
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratin.