NCE12P09S

http://www.ncepower.com Pb Free Product NCE12P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V ● Advanced trench MOSFET process technology ● Ultra low on-resistance with low gate charge Schematic diagram Application ● PWM applications ● Load switch ● Battery charge in cellular handset Marking and pin assignment SOP-8 top view Package marking and ordering information Device Marking Device Device Package NCE12P09S NCE12P09S SOP-8 Reel Size Ø330mm Tape Width 12mm Quantity 2500 units Absolute maximum ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-C...