Document
http://www.ncepower.com
Pb Free Product
NCE3417
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -12V,ID = -4.4A RDS(ON) < 56mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V
D G
S Schematic diagram
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin Assignment
Application
● PWM applications ● Load switch ● Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking 3417
Device NCE3417
Device Package SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current -Pulsed (Note 1) Maxim.