DatasheetsPDF.com

NCE3417 Dataheets PDF



Part Number NCE3417
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Datasheet NCE3417 DatasheetNCE3417 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE3417 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -4.4A RDS(ON) < 56mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free prod.

  NCE3417   NCE3417


Document
http://www.ncepower.com Pb Free Product NCE3417 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -4.4A RDS(ON) < 56mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin Assignment Application ● PWM applications ● Load switch ● Power management SOT-23 top view Package Marking And Ordering Information Device Marking 3417 Device NCE3417 Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous Drain Current -Pulsed (Note 1) Maxim.


NCE12P09S NCE3417 NCE2301F


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)