BCW33

BCW33 BCW33 NPN General Purpose Amplifier This device is designed for general purpose applications at collector currents to 300mA. Sourced from process 07. 3 2 1 SOT-23 Mark: D3 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current (DC) Operating and Storage Junction Temperature Range Value 32 32 5.0 500 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition IC = 2.0mA, IB = 0 IC = 10µA, IB = 0 IC = 10µA, IC = 0 VCB = 32V, IE = 0 VCB = 32V, IE = 0, TA = 100°C IC = 2.0mA, VCE = 5.0V IC = 10mA, IB = 0.5mA IC = 2.0mA, VCE = 5.0V IC = 2.0mA, VCE = 5.0V f = 35MHz VCB = 10V, IE = 0, f = 1.0MHz IC = 0.2mA, VCE = 5.0V RS = 2.0kΩ, f = 1.0kHz BW = 200Hz 0.55 200 4.0 10 pF dB 420 Min. 32 32 5.0 100 10 800 0.25 0.7 V V Typ. Max. Units V V V nA µA Off Characteristics Collector-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteris...