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NCE2321A Dataheets PDF



Part Number NCE2321A
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Datasheet NCE2321A DatasheetNCE2321A Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE2321A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2321A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.5A RDS(ON) <70mΩ @ VGS=-1.8V RDS(ON) <50mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing .

  NCE2321A   NCE2321A


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http://www.ncepower.com Pb Free Product NCE2321A NCE P-Channel Enhancement Mode Power MOSFET Description The NCE2321A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.5A RDS(ON) <70mΩ @ VGS=-1.8V RDS(ON) <50mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PA switch ● Load switch ● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2321A NCE2321A SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current .


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