Document
http://www.ncepower.com
Pb Free Product
NCE30P20Q
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P20Q uses advanced trench technology to provide excellent RDS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -30V,ID = -20A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V
● High Power and current handing capability ● Lead free product is acquired ● Surface mount package
Schematic diagram
Application
● PWM applications ● Load switch ● Power management
Marking and pin assignment
Package Marking and Ordering Information
Device Marking NCE30P20Q
Device NCE30P20Q
Device Package DFN3.3X3.3
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Drain Current-Pulsed (Note 1) Maximum Power Dissipation Ope.