NCE30P12S

http://www.ncepower.com Pb Free Product NCE30P12S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●PWM applications ●Load switch ●Power management Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 30P12 NCE30P12S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed...