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NCE40P05S

NCE Power Semiconductor

P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05...


NCE Power Semiconductor

NCE40P05S

File DownloadDownload NCE40P05S Datasheet


Description
http://www.ncepower.com Pb Free Product NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application Marking and pin assignment ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 40P05 NCE40P05S SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Drain Current-C...




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