NCE60P04R

http://www.ncepower.com Pb Free Product NCE60P04R NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4.3A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Load switch ● PWM application SOT-223 top view Package Marking and Ordering Information Device Marking NCE60P04R Device NCE60P04R Device Package SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current Maximum Power Dissi...