NCE55P04S

http://www.ncepower.com Pb Free Product NCE55P04S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P04S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-4A RDS(ON) <82mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE55P04S NCE55P04S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Contin...