NCE01P18

http://www.ncepower.com Pb Free Product NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in notebook computer ● Portable equipment and battery powered systems Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01P18 NCE01P18 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sour...