N & P-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE30D2519K
NCE N&P-Channel complementary Power MOSFET
Description
The NCE30D2...
Description
http://www.ncepower.com
Pb Free Product
NCE30D2519K
NCE N&P-Channel complementary Power MOSFET
Description
The NCE30D2519K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features N channel
● VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V
p channel
● VDS =-30V,ID =-19A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) <65mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● H-bridge ● Inverters
Schematic diagram
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
30D2519K
NCE30D2519K
TO-252-4L
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