BCW60

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors Product specification Supersedes data of 1997 Mar 10 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 32 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. handbook, halfpage BCW60 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER BCW60B BCW60C BCW60D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 32 32 5 100 200 200 250 +150 150 +150 MARKING CODE(1) AB∗ AC∗ AD∗ Top view 1 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. UNIT V V V mA mA mA mW °C °C °C 1999 Apr 22 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS...