Document
http://www.ncepower.com
Pb Free Product
NCE603S
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
Schematic diagram
● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device
Device Package Reel Size
Tape width
Quantity
NCE603S
NCE603S
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Unit
Drain-Source Voltage
VDS 60 -60 V
Gate-Source Voltage
VGS ±20 ±20 V
Continuous Drain Current.