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NCE603S Dataheets PDF



Part Number NCE603S
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet NCE603S DatasheetNCE603S Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE603S N and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V Schematic diagram ● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V ● High power and current ha.

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http://www.ncepower.com Pb Free Product NCE603S N and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V Schematic diagram ● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE603S NCE603S SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current.


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