NCE20PK0402J

http://www.ncepower.com Pb Free Product NCE20PK0402J Integrated P-Channel Enhancement Mode Power MOSFET and Schottky Diode Description The NCE20PK0402J uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. General Features MOSFET ● VDS = -20V,ID = -4A RDS(ON) < 80mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 160mΩ @ VGS=-1.8V Schottky Diode ● VKA(V) = 20V, IF = 2A, VF<[email protected] Schematic diagram Marking and pin assignment Application ● Bidirectional blocking switch ● DC-DC conversion applications DFNWB2X2-6L Bottom View Package Marking and Ordering Information Device Marking Device Device Package 0402 NCE20PK0402J DFNWB2X2-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol MOSFET Drain-Source Voltage Gate-...