NCE1205

http://www.ncepower.com Pb Free Product NCE1205 N and P-Channel Enhancement Mode Power MOSFET Description The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =12V,ID =5A RDS(ON) <32mΩ @ VGS=4.5V RDS(ON) <42mΩ @ VGS=2.5V RDS(ON) < 80mΩ @ VGS=1.8V ● P-Channel VDS = -12V,ID = -5A RDS(ON) <74mΩ @ VGS=-4.5V RDS(ON) <110mΩ @ VGS=-2.5V RDS(ON) < 220mΩ @ VGS=-1.8V ● Load Switch for Portable Devices N-channel P-channel Pin assignment Package Marking and Ordering Information Device Marking 1205 Device NCE1205 Device Package DFN2X2-6L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TA=25℃ TA=70℃ Maximum Power Dissip...