NCEP60T18 MOSFET Datasheet

NCEP60T18 Datasheet, PDF, Equivalent


Part Number

NCEP60T18

Description

N-Channel Super Trench Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 7 Pages
Datasheet
Download NCEP60T18 Datasheet


NCEP60T18
http://www.ncepower.com
Pb Free Product
NCEP60T18
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP60T18 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
VDS =60V,ID =180A
RDS(ON) < 2.9m@ VGS=10V (Typ:2.5m)
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
100% UIS tested
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP60T18
NCEP60T18
TO-220-3L
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
60
±20
Drain Current-Continuous (Silicon Limited)
ID 180
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
126
720
220
1.47
1036
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.68
Quantity
-
Unit
V
V
A
A
A
W
W/
mJ
/W
Wuxi NCE Power Co., Ltd
Page 1
V1.0

NCEP60T18
http://www.ncepower.com
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=30V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=20A
VGS=10V,RG=4.7
VDS=30V,ID=20A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=150A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP60T18
Min Typ Max Unit
60 - V
- - 1 μA
- - ±100 nA
2.0 2.8
- 2.5
50 -
4.0
2.9
-
V
m
S
- 4500
- 965
- 24
-
-
-
PF
PF
PF
-6
- 11
- 23
-3
- 70
- 18.6
- 15.3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 180
- 50
- 66
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Features http://www.ncepower.com Pb Free Product NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is un iquely optimized to provide the most ef ficient high frequency switching perfor mance. Both conduction and switching po wer losses are minimized due to an extr emely low combination of RDS(ON) and Qg . This device is ideal for high-frequen cy switching and synchronous rectificat ion. Schematic diagram General Featur es ● VDS =60V,ID =180A RDS(ON) < 2.9m Ω @ VGS=10V (Typ:2.5mΩ) ● Excelle nt gate charge x RDS(on) product ● Ve ry low on-resistance RDS(on) ● 150 ° C operating temperature ● Pb-free lea d plating ● 100% UIS tested Marking and pin assignment Application ● DC/ DC Converter ● Ideal for high-frequen cy switching and synchronous rectificat ion 100% UIS TESTED! 100% ∆Vds TESTED ! TO-220-3L top view Package Marking and Ordering Information Device Markin g Device Device Package Reel Size Tape width NCEP60T18 NC.
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