NCEP0178A MOSFET Datasheet

NCEP0178A Datasheet, PDF, Equivalent


Part Number

NCEP0178A

Description

N-Channel Super Trench Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 7 Pages
Datasheet
Download NCEP0178A Datasheet


NCEP0178A
http://www.ncepower.com
Pb Free Product
NCEP0178A
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP0178A uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =100V,ID =78A
RDS(ON) =7.2m(typical) @ VGS=10V
RDS(ON) =9.5m(typical) @ VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Schematic diagram
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP0178A
NCEP0178A
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
78
60
320
125
0.83
320
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

NCEP0178A
http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=39A
VGS=4.5V, ID=39A
VDS=10V,ID=39A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=50V,ID=39A
VGS=10V,RG=4.7
VDS=50V,ID=39A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=78A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP0178A
1.2 /W
Min Typ Max Unit
100
--
--
-
1
±100
V
μA
nA
1.2 1.7
- 7.2
- 9.5
40 -
2.2
8.5
12
-
V
m
m
S
- 4200 5480
- 354 425
- 23
30
PF
PF
PF
- 15
- 10
- 41
-6
- 65
- 15.3
-9
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
--
78
- 101
- 193
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Features http://www.ncepower.com Pb Free Product NCEP0178A NCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is un iquely optimized to provide the most ef ficient high frequency switching perfor mance. Both conduction and switching po wer losses are minimized due to an extr emely low combination of RDS(ON) and Qg . This device is ideal for high-frequen cy switching and synchronous rectificat ion. General Features ● VDS =100V,ID =78A RDS(ON) =7.2mΩ(typical) @ VGS=10 V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V ● Excellent gate charge x RDS(on) pro duct(FOM) ● Very low on-resistance RD S(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Schematic diagram Marking and p in assignment Application ● DC/DC Co nverter ● Ideal for high-frequency sw itching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package .
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