NCE65T1K2D MOSFET Datasheet

NCE65T1K2D Datasheet, PDF, Equivalent


Part Number

NCE65T1K2D

Description

N-Channel Super Junction Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 10 Pages
Datasheet
Download NCE65T1K2D Datasheet


NCE65T1K2D
NCE65T1K2,NCE65T1K2D,NCE65T1K2F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON)TYP.
ID
650
950
4
V
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T1K2
TO-220
NCE65T1K2
NCE65T1K2D
TO-263
NCE65T1K2D
NCE65T1K2F
TO-220F
NCE65T1K2F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE65T1K2
NCE65T1K2F
NCE65T1K2D
650
±30
4 4*
2.5 2.5*
16 16*
41 28.4
0.328
0.227
27
0.7
0.1
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Co., Ltd
Page
1 http://www.ncepower.com v1.0

NCE65T1K2D
NCE65T1K2,NCE65T1K2D,NCE65T1K2F
Parameter
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
dv/dt
dv/dt
TJ,TSTG
Symbol
RthJC
RthJA
NCE65T1K2
NCE65T1K2F
NCE65T1K2D
50
15
-55...+150
Unit
V/ns
V/ns
°C
NCE65T1K2
NCE65T1K2F
NCE65T1K2D
3.0 4.4
62 80
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2A
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=4A,
Qgs
VGS=10V
Qgd
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=380V,ID=2.5A,
RG=5Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward On Voltage
VSD Tj=25°C,ISD=4A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=2A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Min Typ
650
3
950
304
18
0.6
8.8
2.3
4
8
4
52
9
0.9
200
0.6
6
Max
1
50
±100
4
1100
12
70
18
4
16
1.2
Unit
V
μA
μA
nA
V
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Co., Ltd
Page
2 http://www.ncepower.com v1.0


Features NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Chann el Super Junction Power MOSFET Ⅲ Gen eral Description The series of devices use advanced trench gate super junction technology and design to provide excel lent RDS(ON) with low gate charge. This super junction MOSFET fits the industr y’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New tec hnology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Cha rge cause lower driving requirements 100% Avalanche Tested ●ROHS complian t VDS RDS(ON)TYP. ID 650 950 4 V mΩ A Application ● Power factor correc tion(PFC) ● Switched mode power s upplies(SMPS) ● Uninterruptible Power Supply(UPS) Schematic diagram Pa ckage Marking And Ordering Information Device Device Package Marking NCE65 T1K2 TO-220 NCE65T1K2 NCE65T1K2D TO -263 NCE65T1K2D NCE65T1K2F TO-220F NCE65T1K2F TO-263 TO-220 TO-220F Table 1. Absolute Maximum .
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