NCE65T900K MOSFET Datasheet

NCE65T900K Datasheet, PDF, Equivalent


Part Number

NCE65T900K

Description

N-Channel Super Junction Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 8 Pages
Datasheet
Download NCE65T900K Datasheet


NCE65T900K
NCE65T900INCE65T900K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON)TYP.
ID
650
750
5
V
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T900I
TO-251
NCE65T900I
NCE65T900K
TO-252
NCE65T900K
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
VDS
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25)
PD
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
EAS
IAR
EAR
Parameter
Symbol
TO-251
TO-252
Value
650
±30
5
3
20
46
0.37
52
0.9
0.14
Value
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Unit
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
v1.1

NCE65T900K
NCE65T900INCE65T900K
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
50
15
-55...+150
V/ns
V/ns
°C
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
2.72
75
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=5A,
Qgs
VGS=10V
Qgd
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=380V,ID=3A,
RG=5Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=5A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=2.5A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Min
650
3
Typ
750
370
25
0.5
10.5
2.6
5.3
7
3
52
10
0.9
210
0.66
6.5
Max
1
50
±100
4
900
15
62
16
5
20
1.2
Unit
V
μA
μA
nA
V
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Co., Ltd
Page 2
http://www.ncepower.com
v1.1


Features NCE65T900INCE65T900K N-Channel Super Ju nction Power MOSFET Ⅲ General Descri ption The series of devices use advance d trench gate super junction technology and design to provide excellent RDS(ON ) with low gate charge. This super junc tion MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appli cations. Features ●New technology for high voltage device ●Low on-resistan ce and low conduction losses ●Small p ackage ●Ultra Low Gate Charge cause l ower driving requirements ●100% Avala nche Tested ●ROHS compliant VDS RDS( ON)TYP. ID 650 750 5 V mΩ A Applica tion ● Power factor correction(PFC ● Switched mode power supplies(SMP S) ● Uninterruptible Power Supply(U PS) Schematic diagram Package Marki ng And Ordering Information Device De vice Package Marking NCE65T900I TO-2 51 NCE65T900I NCE65T900K TO-252 NCE 65T900K Table 1. Absolute Maximum Rati ngs (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS.
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