NCE65T680 MOSFET Datasheet

NCE65T680 Datasheet, PDF, Equivalent


Part Number

NCE65T680

Description

N-Channel Super Junction Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 10 Pages
Datasheet
Download NCE65T680 Datasheet


NCE65T680
NCE65T680D,NCE65T680,NCE65T680F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON)TYP
ID
650
600
7
V
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T680D
TO-263
NCE65T680D
NCE65T680
TO-220
NCE65T680
NCE65T680F
TO-220F
NCE65T680F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE65T680D
NCE65T680F
NCE65T680
650
±30
7 7*
4.5 4.5*
28 28*
60 31.4
0.48 0.25
101
1.5
0.28
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
Preview

NCE65T680
NCE65T680D,NCE65T680,NCE65T680F
Parameter
Symbol
NCE65T680D
NCE65T680F
NCE65T680
Unit
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
50
15
-55...+150
V/ns
V/ns
°C
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Symbol
NCE65T680D
NCE65T680F
NCE65T680
Unit
Thermal ResistanceJunction-to-CaseMaximum
RthJC
2.08
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
3.98 °C /W
80 °C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
650
V
1 μA
100 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3
4V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.5A
600 680 mΩ
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
435 pF
28 pF
3.3 pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=7A,
Qgs
VGS=10V
Qgd
11 nC
3.5 nC
5 nC
Switching times
Turn-on Delay Time
td(on)
8 nS
Turn-on Rise Time
tr VDD=380V,ID=3.5A,
7 nS
Turn-Off Delay Time
td(off)
RG=4.7Ω,VGS=10V
58 75
nS
Turn-Off Fall Time
tf
9 15 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
7A
28 A
Forward On Voltage
VSD Tj=25°C,ISD=7A,VGS=0V
0.9 1.2
V
Reverse Recovery Time
trr
210 nS
Reverse Recovery Charge
Qrr Tj=25°C,IF=3.5A,di/dt=100A/μs
0.85
uC
Peak Reverse Recovery Current
Irrm
8A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Co., Ltd
Page 2
http://www.ncepower.com
Preview


Features NCE65T680D,NCE65T680,NCE65T680F N-Chann el Super Junction Power MOSFET Ⅲ Gen eral Description The series of devices use advanced trench gate super junction technology and design to provide excel lent RDS(ON) with low gate charge. This super junction MOSFET fits the industr y’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New tec hnology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Cha rge cause lower driving requirements 100% Avalanche Tested ●ROHS complian t VDS RDS(ON)TYP ID 650 600 7 V mΩ A Application ● Power factor correct ion(PFC) ● Switched mode power su pplies(SMPS) ● Uninterruptible Power Supply(UPS) Schematic diagram Pac kage Marking And Ordering Information Device Device Package Marking NCE65T 680D TO-263 NCE65T680D NCE65T680 TO -220 NCE65T680 NCE65T680F TO-220F N CE65T680F TO-263 TO-220 TO-220F Table 1. Absolute Maximum R.
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