NCE65TF130F MOSFET Datasheet

NCE65TF130F Datasheet, PDF, Equivalent


Part Number

NCE65TF130F

Description

N-Channel Super Junction Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 10 Pages
Datasheet
Download NCE65TF130F Datasheet


NCE65TF130F
NCE65TF130D,NCE65TF130,NCE65TF130F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
Optimized body diode reverse recovery performance
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON)TYP
ID
650 V
110 mΩ
28 A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
LLC Half-bridge
Schematic diagram
Intrinsic fast-recovery body diode
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65TF130D
TO-263
NCE65TF130D
NCE65TF130
TO-220
NCE65TF130
NCE65TF130F
TO-220F
NCE65TF130F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE65TF130D
NCE65TF130F
NCE65TF130
650
±30
28 28*
18 18*
112 112*
260 35
2.08 0.28
676
5.2
3.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Co., Ltd
Page 1
http://www.ncepower.com
v1.0

NCE65TF130F
NCE65TF130D,NCE65TF130,NCE65TF130F
Parameter
Symbol
NCE65TF130D
NCE65TF130F
NCE65TF130
Unit
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
50
50
-55...+150
V/ns
V/ns
°C
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Symbol
NCE65TF130D
NCE65TF130F
NCE65TF130
Unit
Thermal ResistanceJunction-to-CaseMaximum
RthJC
0.48
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
3.57 °C /W
80 °C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
650
V
1 μA
100 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3 3.5
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=14A
110 130 mΩ
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
2070
120
0.5
pF
pF
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=480V,ID=28A,
Qgs
VGS=10V
Qgd
37.5 nC
13 nC
11.5 nC
Switching times
Turn-on Delay Time
td(on)
14 nS
Turn-on Rise Time
tr VDD=380V,ID=14A,
12 nS
Turn-Off Delay Time
td(off)
RG=2.3Ω,VGS=10V
65 nS
Turn-Off Fall Time
tf
11 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
28 A
112 A
Forward On Voltage
VSD Tj=25°C,ISD=28A,VGS=0V
0.9 1.2
V
Reverse Recovery Time
trr
190 nS
Reverse Recovery Charge
Qrr Tj=25°C,IF=14A,di/dt=100A/μs
2
uC
Peak Reverse Recovery Current
Irrm
21 A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Co., Ltd
Page 2
http://www.ncepower.com
v1.0


Features NCE65TF130D,NCE65TF130,NCE65TF130F N-Ch annel Super Junction Power MOSFET Ⅲ General Description The series of devic es use advanced trench gate super junct ion technology and design to provide ex cellent RDS(ON) with low gate charge. T his super junction MOSFET fits the indu stry’s AC-DC SMPS requirements for PF C, AC/DC power conversion, and industri al power applications. Features ●Opti mized body diode reverse recovery perfo rmance ●Low on-resistance and low con duction losses ●Small package ●Ultr a Low Gate Charge cause lower driving r equirements ●100% Avalanche Tested ROHS compliant VDS RDS(ON)TYP ID 650 V 110 mΩ 28 A Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterr uptible Power Supply(UPS) ● LLC H alf-bridge Schematic diagram  Intri nsic fast-recovery body diode Package Marking And Ordering Information Devic e Device Package Marking NCE65TF130D TO-263 NCE65TF130D NCE65TF130 TO-220 NCE65TF130 NCE65TF1.
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